退火温度对碳注入外延硅蓝光发射特性的影响

退火温度对碳注入外延硅蓝光发射特性的影响

李 忠¹，赵 显²，李玉国¹，薛成山¹

（1.山东师范大学物理与电子科学学院，山东 济南 250014；2.山东大学晶体材料国家重点实验室，山东济南 250100）

摘要: 获得了不同退火温度注碳外延硅的蓝光发射谱，分析了退火温度对其蓝光发射特性的影响，发现退火温度为1 000℃样品具有最强的发射强度。认为经碳注入所引入的杂质C = O复合体是发光的重要因素；经碳注入氮气氛中退火及电化学腐蚀处理形成纳米硅镶嵌结构，因量子限制效应–表面复合效应而发光。

关键词: 注碳外延硅；蓝光发射；纳米硅镶嵌结构；氮气氛中退火

中图分类号: TN304.24 文献标识码:A 文章编号:1001-2028（2004）07-0046-02

Effect of Annealing Temperature to Blue Emission of Epitaxial

Silicon with C⁺ Implantation

LI Zhong¹, ZHAO Xian², LI Yu-guo¹, XUE Cheng-shan¹

(1. School of Physics and ELECTRONICS, Shandong Normal University, Ji’nan 250014, China; 2. State Key Laboratory of Crystal Materials, Shandong University, Ji’nan 250100, China)

Abstract: Epitaxial silicon with C⁺ implantation is used to acquire blue emission, and the blue properties of which are discussed therein to find that 1000℃ is the optimal annealing temperature. As to the resource of blue luminescence, we hold that the C = O compound introduced into silicon substrate with C^＋ implantation is vital to blue emission. Nanometer Si with embedded structure formed by C^＋ implantation-N₂ annealing-anodization can emit blue light due to quantum confinement effect-surface recombination effect.

Key words: Epitaxial silicon with C^＋ implantation; Blue emission; Nanometer Si with embedded structure；N₂ anealing